期刊
DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV
卷 725, 期 -, 页码 153-+出版社
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.725.153
关键词
Multicrystalline silicon; Synchrotron radiation; Grain boundary; X-ray microbeam; Lattice strain; X-ray topography
资金
- Global Centers of Excellence (COE) Program, Center for Atomically Controlled Fabrication Technology
- Ministry of Education, Culture, Sports, Science, and Technology of Japan
- BL28B2 in the SPring-8 with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) [2009A1313, 2010A1191, 2010B1316, 2011A1243]
- synchrotron monochromatic x-ray topography was performed at the Photon Factory [2008G017, 2010G070]
A synchrotron white x-ray microbeam diffraction method was employed to investigate lattice distortion in multicrystalline silicon for photovoltaic cells. The measurements were carried out by scanning the sample, and transmission Laue patterns were observed at each position on the sample. Intensity and position maps of the Laue spots showed the distribution of the crystalline quality of the grains and the bending of the lattice planes. Strain and bending distributions were extracted from an analysis of Laue spots at diagonal positions, and these were compared with those obtained by other techniques.
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