期刊
THIN SOLID FILMS
卷 660, 期 -, 页码 777-781出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2018.03.065
关键词
Conductive filament; Electro-chemical metallization; Valence change memory; Switching device; Zirconium dioxide; Titanium tungsten alloy
类别
资金
- Ministry of Science and Technology, Taiwan [MOST 105-2221-E-009-134-MY3]
The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon.
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