期刊
THIN SOLID FILMS
卷 654, 期 -, 页码 38-48出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2018.03.075
关键词
Diamond-like carbon; Silicon; Chemical vapor deposition; Internal stress; Adhesion; Tribology
类别
资金
- JSPS KAKENHI [24560812, 15K06432]
- Grants-in-Aid for Scientific Research [15K06432, 24560812] Funding Source: KAKEN
We have deposited silicon-incorporated diamond-like carbon (Si-DLC) films by plasma-enhanced chemical vapor deposition using monomethylsilane (CH3SiH3; MMS) as a Si source, and systematically investigated the impacts of substrate bias and dilution gas on the mechanical and tribological properties of the Si-DLC films. The use of a pulse bias and hydrogen dilution is very effective in suppressing the generation of particles during the deposition. The internal stress of the Si-DLC films deposited using the pulse bias tended to be lower than that of the Si-DLC films deposited using a DC bias, while the hydrogen dilution resulted in the increase in the internal stress. On the other hand, the Si-DLC film deposited with H-2 using the pulse bias showed the highest adhesion strength and the lowest friction coefficient. The use of the pulse bias resulted in the increase in the wear resistance.
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