期刊
THIN SOLID FILMS
卷 645, 期 -, 页码 278-281出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2017.11.006
关键词
Aluminum-doped zinc oxide; Spin-on-glass; Flexible electronics; Solution process
类别
资金
- VIEP-BUAP [DJMA-EXC17-G]
- NPTC-PRODEP, SEP-Mexico
- PRODEP
In this work, the fabrication and characterization of fully solution-processed flexible Metal-InsulatorSemiconductor (MIS) diodes are presented. The MIS structure was fabricated using aluminum doped zinc oxide and spin-on glass as semiconductor and insulator, respectively. The maximum temperature used was 200 degrees C. The electrical characteristics of the flexible devices show a good agreement with the typical characteristics of a semiconductor diode even while bent to 5 mm tensile radius.
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