期刊
THIN SOLID FILMS
卷 645, 期 -, 页码 5-9出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2017.10.024
关键词
Gallium antimonide; Metal organic chemical vapor deposition; Silicon substrate; X-ray diffraction; Rocking-curve; Surface roughness; Two-step growth
类别
资金
- LabEx Minos Program [ANR-10-LABX-55-01]
- French Recherches Technologiques de Base (Basis Technological Research) program
- RENATECH Program
Antiphase boundaries free GaSb epitaxial layers with low surface roughness (< 0.5 nm) have been synthesized on standard microelectronic 300 mm nominal (001)-Si substrates by metal organic chemical vapor deposition using a two-step growth process. By adjusting the growth temperature and the thickness of the nucleation layer, antiphase boundary free GaSb layers as thin as 250 nm are obtained. The 12% lattice mismatch between GaSb and Si is accommodated by both the formation of threading dislocations and a periodic array of 90 degrees misfit dislocations at the interface. A GaSb layer inserted between AlSb barriers has been grown on an optimized GaSb/(001)-Si buffer layer and exhibits room temperature photoluminescence.
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