期刊
THIN SOLID FILMS
卷 660, 期 -, 页码 263-266出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2018.06.027
关键词
Germanium tin; Boron; Doping; Chemical vapor deposition; Epitaxy
类别
资金
- Ministry of Science and Technology, Taiwan [106-2221-E-002 -197 -MY3, 106-2221-E-002 -232 -MY3, 106-2622-8-002 -001 -]
- National Nano Device Laboratories, Hsinchu, Taiwan
Although the Sn content in GeSn can reach 10% using chemical vapor deposition, the reduction of Sn content by in-situ boron doping and solid phase doping by chemical vapor deposition are observed. The Sn loss increases with the increasing boron concentration in GeSn:B alloys, while there is no Sn reduction at the similar phosphorus doping level in GeSn:P. Based on the first principle calculations, the energy for boron to place Sn in GeSn is lower than that for boron to place Ge, indicating that boron atoms prefer to occupy Sn sites. The Sn loss is more serious for boron-implanted GeSn with thermal annealing at 400 degrees C than in-situ boron-doped GeSn even with 500 degrees C thermal annealing.
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