期刊
THIN SOLID FILMS
卷 657, 期 -, 页码 38-41出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2018.05.007
关键词
Manganese germanide; Thin films; Indium arsenide substrates; Ferromagnetism; Sputtering; 14/mcm
类别
资金
- Ciencia-Basica SEP-CONACYT grant [157559]
We report on the growth of MnGe2 thin films on InAs(001) substrates using radio frequency-magnetron cosputtering. Polycrystalline thin films were obtained at a substrate temperature of 353 K. X-ray diffractometry was used to identify the tetragonal MnGe2 phase (space group 14/mcm). Measurements of the magnetic field and temperature dependence of the magnetization revealed that the MnGe2 thin films are ferromagnetic with a magnetization of 280 kAm(-1) and a Curie temperature of 62 K. Additionally, an antiferromagnetic component is observed at low temperatures, which may arise atomic disorder at the grain boundaries between MnGe2 crystallites.
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