期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 119, 期 -, 页码 134-149出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2018.04.049
关键词
MIS and MIM type SBDs; Influence of metal work function; Incorporation of Sr atom on WO3 thin film; I-V; JNSP technique
资金
- DST, Government of India [EMR/2016/007874]
In this work, two different structure of Cu/Sr-WO3/p-Si metal-insulator-semiconductor (MIS) and Cu/Sr-WO3/FTO metal-insulator-metal (MIM) Schottky barrier diodes (SBDs) fabricated with an insulating layer of pure tungsten trioxide (WO3) and Sr-WO3 thin films have been reported. The Sr-WO3 layer was coated separately, with different concentrations (0, 4, 8 and 12 wt %) of strontium (Sr) via jet nebulizer spray pyrolysis technique (JNSP) on the p-type silica wafer (p-Si) and fluorine doped tin oxide (FTO) substrates which are been optimized at 400 degrees C. The XRD analysis reveals the multiphase crystalline structures for 12 wt % of Sr-WO3 film with higher average crystallite size. FE-SEM images show the randomly oriented sub-microsized slab and seashell like structures. Higher surface roughness with improved grain size for 12 wt % of Sr-WO3 film. The presence of W, O and Sr atoms was confirmed by EDX spectra. In optical studies, Maximum absorption with minimum optical band gap was observed for 12 wt % of Sr-WO3 composite film. There was a linear increase in the electrical conductivity of the films with higher wt. % of Sr. Evidently the activation energy decreased with Sr concentration which is in accordance with the bandgap values. The fitting results of the measured I-V, reveal that MIS (SBDs) under illumination condition have minimum ideality factor (n = 2.39) and maximum barrier height (Phi(b) = 0.57) values for higher concentration (12 wt %) of Sr film compared to MIM SBDs. (C) 2018 Elsevier Ltd. All rights reserved.
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