High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

Superconducting titanium nitride (TiN) thin films were deposited on magnesium oxide, sapphire and silicon nitride substrates at 700 degrees C, using a pulsed laser deposition (PLD) technique, where infrared (1064 nm) pulses from a solid-state laser were used for the ablation from a titanium target in a nitrogen atmosphere. Structural studies performed with x-ray diffraction showed the best epitaxial crystallinity for films deposited on MgO. In the best films, superconducting transition temperatures, T-C, as high as 4.8 K were observed, higher than in most previous superconducting TiN thin films deposited with reactive sputtering. A room temperature resistivity down to similar to 17 mu Omega cm and residual resistivity ratio up to 3 were observed in the best films, approaching reported single crystal film values, demonstrating that PLD is a good alternative to reactive sputtering for superconducting TiN film deposition. For less than ideal samples, the suppression of the film properties were correlated mostly with the unintended incorporation of oxygen (5-10 at%) in the film, and for high oxygen content films, vacuum annealing was also shown to increase the T-C. On the other hand, superconducting properties were surprisingly insensitive to the nitrogen content, with high quality films achieved even in the highly nitrogen rich, Ti:N = 40/60 limit. Measures to limit oxygen exposure during deposition must be taken to guarantee the best superconducting film properties, a fact that needs to be taken into account with other deposition methods, as well.