期刊
SOLID STATE COMMUNICATIONS
卷 278, 期 -, 页码 31-35出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2018.04.011
关键词
BLT thin films; rf-magnetron sputtering; (117)-oriented crystalline; Ferroelectric properties
资金
- National Natural Science Foundation of China [51271036]
- National Key RAMP
- D Program of China [2016YFB0402701]
- Focus on research and development plan in Shandong Province [2017GGX202008]
Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films were deposited on Pt(111)/Ti/SiO2/Si substrates at 400 degrees C using rf-magnetron sputtering method. The microstructures were studied by X-ray diffraction, scanning electron microscopy and energy dispersive spectrometer. The as-deposited thin film is amorphous, while transformed to microcrystalline and well crystalline states after annealing at 650 degrees C and 750 degrees C, respectively. After annealing at 750 degrees C, the polycrystalline BLT thin film showed plated-like grains all with (117)-preferred orientation. Analyses of ferroelectric properties indicated that, comparing with the as-deposited thin film, the highly (117)-oriented crystalline thin film exhibited well-saturated hysteresis loops with a superior remnant polarization (2P(r)) of 30.7 mu C/cm(2).
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