期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 186, 期 -, 页码 356-364出版社
ELSEVIER
DOI: 10.1016/j.solmat.2018.07.007
关键词
Al2O3; Boron emitter; PERT; Phosphorus emitter; SiO2; Surface passivation
资金
- MOST [S2013GR0622]
- TEKES (Finish Project) [40843]
- TEKES (Chinese Project) [S2013GR0622]
- Aalto ELEC Doctoral School
- Jenny and Antti Wihuri Foundation [00170285]
In this paper, we present an effective emitter passivation scheme using SiO2/Al2O3/SiN stacks. Our study shows that SiO2/Al2O3/SiNx stacks can well passivate both p(+) and n(+) emitters due to an excellent chemical passivation combined with a weak field-effect passivation. Good quality boron and phosphorus emitters were achieved over a broad emitter-doping range, as demonstrated by post-fired emitter saturation current of 20 and 30 fA cm(-2), respectively. Based on the results obtained with SiO2/Al2O3/SiN emitter passivation, we present an industrial roadmap for a p-PERT bifacial cell structure. Using this roadmap, we demonstrate industrial p-PERT bifacial cells with front side efficiency of 20.5%, rear side efficiency of 19.8% (bifaciality factor BF = 0.98) for rear textured cells and 17.5% (BF = 0.85) for rear planar cells. In particular, the cells with bifacial SiO2/Al2O3/SiN passivation on both p+ and n+ emitters also demonstrate promising performance and a simplified cell process. The results show that SiO2/Al2O3/SiN emitter passivation scheme is a promising candidate for photovoltaic industry.
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