Device simulation of inverted CH3NH3PbI3-xClx perovskite solar cells based on PCBM electron transport layer and NiO hole transport layer

The perovskite solar cells have attracted great attention owing to their low cost and high performance. For perovskite solar cells, metal oxides demonstrated great potential with much higher charge carrier mobility and superior stability than organic materials. In this study, we employed NiO as hole transport layer and chloride doped CH3NH3PbI3 (CH3NH3PbI3-Clx) as absorber due to its enhanced performance. We investigated the effects of several parameters on the solar cell performance through device simulation. It was found that solar cell performance was related to the doping concentrations of NiO and PCBM, and the thicknesses of perovskite and NiO interlayer. The optimized performance of perovskite solar cells with power conversion efficiency (PCE) of 22.0% was achieved when doping concentrations of NiO and PCBM were 1 x 10(17) cm(-3) and 1 x 10(19) cm(-3), respectively, and thicknesses of perovskite and NiO were 450 nm and 30 nm, respectively. Moreover, a high PCE of 18.0% was obtained based on experimental condition. These results showed that this kind of solar cell was a potential choice for perovskite solar cells with high efficiency.