期刊
IEEE SENSORS JOURNAL
卷 15, 期 3, 页码 1358-1365出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2014.2361610
关键词
SPAD detector; Raman spectroscopy; time gating
资金
- Academy of Finland through the Centre of Excellence in Laser Scanning Research [272196, 255359, 263705, 251571]
- TEKES
- Academy of Finland (AKA) [255359, 251571, 263705] Funding Source: Academy of Finland (AKA)
A time-gated 2 x (4) x 128 single photon avalanche diode line detector for pulsed laser Raman spectroscopy has been developed and fabricated in a 0.35-mu m high-voltage CMOS technology. The sample is illuminated with short laser pulses (similar to 100 ps) at a rate of similar to 50 kHz and four time gates synchronized with these pulses and having selectable widths within the subnanoseconds range are used to measure the Raman photons and fluorescence background simultaneously. The fluorescence background measurement is used to suppress the residual fluorescence level to improve the quality of the Raman spectrum. The variation in the width of the time window was measured to be approximately +/- 17.5 ps along the spectral axis when set externally to a nominal value of 100 ps. Measurements with a reference sample demonstrate the effect of nonhomogeneities in the time gates on the quality of the recorded Raman spectrum and the residual fluorescence correction.
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