期刊
SMALL
卷 14, 期 22, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201800265
关键词
high efficiency; high mobility; large area; light-emitting transistors (LETs); metal-oxide heterostructures; quantum dots (QDs)
类别
资金
- National Natural Science Foundation of China [61605082, 11374161, 11427808, 51602071]
- National Basic Research Program of China [2016YFA0202000]
- Natural Science Foundation of Jiangsu Province [BK20160969, BK20160970]
- Natural Science Foundation of the Jiangsu Higher Education Institutions of China [16KJB510020]
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
- Beijing science and technology projects [Z161100002116016]
The monolithic integration of light-emission with a standard logic transistor is a much-desired multifunctionality. Here, a high-efficiency light-emitting transistor (LET) employing an inorganic quantum dots (QDs) emitter and a laser-annealed vertical metal-oxide heterostructure is reported. The experimental results show that the peak efficiency and luminance of this QDs LET (QLET) are 11% and 8000 cdm(-2), respectively at a monochromatic emitting light wavelength of 585 nm. As far as it is known, these are among the highest values ever achieved for LETs. More importantly, the QLET exhibits an ultrahigh electron mobility of up to 25 cm(2) V-1 S-1, a lower efficiency roll-off (7% at high 3000 cdm(-2)), and excellent stability with long-duration gate stress switching cycles. Additionally, this approach is compatible with those used in conventional large-area silicon electronic manufacturing and can enable a scalable and cost-effective procedure for future integrated versatile displays and lighting applications.
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