期刊
SMALL
卷 14, 期 19, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201800032
关键词
field effect transistors; low-temperature synthesis; metallic to semiconducting; plasma-assisted; platinum diselenide; transition metal dichalcogenide
类别
资金
- Ministry of Science and Technology [104-2628-M-007-004-MY3, 104-2221-E-007-048-MY3, 105-2633-M-007-003, 105-2119-M-009-009, 106-2112-M-007-028-MY3]
- National Tsing Hua University [106N509CE1]
- Institute of Materials Research and Engineering (IMRE) under Agency for Science, Technology, and Research (A*STAR) [IMRE/15-2C0115]
The formation of PtSe2-layered films is reported in a large area by the direct plasma-assisted selenization of Pt films at a low temperature, where temperatures, as low as 100 degrees C at the applied plasma power of 400 W can be achieved. As the thickness of the Pt film exceeds 5 nm, the PtSe2-layered film (five monolayers) exhibits a metallic behavior. A clear p-type semiconducting behavior of the PtSe2-layered film (approximate to trilayers) is observed with the average field effective mobility of 0.7 cm(2) V-1 s(-1) from back-gated transistor measurements as the thickness of the Pt film reaches below 2.5 nm. A full PtSe2 field effect transistor is demonstrated where the thinner PtSe2, exhibiting a semiconducting behavior, is used as the channel material, and the thicker PtSe2, exhibiting a metallic behavior, is used as an electrode, yielding an ohmic contact. Furthermore, photodetectors using a few PtSe2-layered films as an adsorption layer synthesized at the low temperature on a flexible substrate exhibit a wide range of absorption and photoresponse with the highest photocurrent of 9 mu A under the laser wavelength of 408 nm. In addition, the device can maintain a high photoresponse under a large bending stress and 1000 bending cycles.
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