期刊
SMALL
卷 14, 期 21, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201800547
关键词
2d materials; atomic layer deposition; semiconductors; SnS2; thin films
类别
资金
- ASM Microchemistry
- Finnish Centre of Excellence in Atomic Layer Deposition - Academy of Finland
- Engineering and Physical Sciences Research Council (EPSRC) [EP/J021229/1, EP/N015800/1]
- EPSRC [EP/N015800/1, EP/J021229/1] Funding Source: UKRI
Semiconducting 2D materials, such as SnS2, hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS2 films has remained a great challenge. Herein, continuous wafer-scale 2D SnS2 films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 degrees C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owing to the unique self-limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T-type crystal structure and composition, smoothness, and continuity of the SnS2 films. A two-stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high-quality SnS2 films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors.
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