Pentacene-Based Photodetector in Visible Region With Vertical Field-Effect Transistor Configuration

Electrical and detection performances of pentacene-based photodetector with vertical field-effect transistor (VFET) configuration were investigated in full visible region. By comparing with planar FET-based photodetector ITO/PMMA(520 nm)/Pentacene(35 nm)/Au, the VFET-based photodetector ITO/Pentacene(80 nm)/Al(15 nm)/Pentacene(80 nm)/Au exhibits better performance. At an output current of ca. -8 x 10(-7) A, the threshold voltage (V-th) was -0.61 V for the VFET-based device at V-DS = -2 V, but V-th = -7.1 V for the planar one at V-DS = -12 V. The performance of photodetectors depends on incident monochromatic light, and the VFET-based photodetector showed a maximum responsivity of 188 mA/W and a photosensitivity peak of 588 under 350-nm light, which were similar to 11.75 and 2.83 times as that of the planar one, respectively. Therefore, it provides an easy way to get the VFET-based organic photodetectors in full visible region with excellent photosensitivity, responsivity, and light selectivity, showing its promising application in all-organic image sensors working at low voltages.