期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 27, 期 6, 页码 642-645出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2015.2388552
关键词
AlGaN; avalanche photodiodes; GaN substrate
资金
- Defense Advanced Research Projects Agency [D11PC20161]
- SAFC Hitech Inc., Haverhill, MA, USA
Ultraviolet (UV) avalanche photodiodes (APDs) based on AlxGa1-xN wide-bandgap semiconductor alloys (x = 0.05) are reported. The epitaxial structure was grown by metalorganic chemical vapor deposition on a GaN substrate having a low dislocation density. Step graded n-type Si-doped AlxGa1-xN layers (x = 0 and 0.02) were introduced instead of a thick n-Al0.05Ga0.95N:Si layer to minimize strain-induced defects and crack formation, resulting in reduced leakage current densities of the devices with various circular mesa diameters. Under UV illumination at lambda = 280 nm, high avalanche gains greater than 1.5 x 10(5) were achieved at reverse biases of V-R > 94 V for the APDs with mesa diameters of 30-70 mu m. In addition, significantly increased spectral responsivities of devices having a 70-mu m mesa diameter was observed at reverse biases of V-R > 90 V, indicating the device approaches to avalanche multiplication.
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