期刊
SENSORS AND ACTUATORS A-PHYSICAL
卷 272, 期 -, 页码 199-205出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2017.12.066
关键词
Thin films; Pulsed dc magnetron sputtering; Titanium nitride; Resistivity; Microheater
资金
- Ministry of Communication and Information Technology
Titanium nitride (TiN) thin films are deposited on Si/SiO2 substratesby using Pulsed DC magnetron sputtering and are characterized for their structural, mechanical and electrical properties for their application as localized heating elements in microsystem devices. The influence of substrate temperature on the properties of TiN films has been investigated. The correlation between the structural orientation with mechanical and electrical properties has been established. The films deposited at a substrate temperature of 300 degrees C have shown better structural, mechanical and electrical properties. This film has been chosen for the fabrication of microheater and its characterization. A maximum temperature of 250 degrees C is achieved by applying a power of 2.8 W to the microheater. (C) 2018 Elsevier B.V. All rights reserved.
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