4.7 Article

Pulsed DC magnetron sputtered titanium nitride thin films for localized heating applications in MEMS devices

期刊

SENSORS AND ACTUATORS A-PHYSICAL
卷 272, 期 -, 页码 199-205

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2017.12.066

关键词

Thin films; Pulsed dc magnetron sputtering; Titanium nitride; Resistivity; Microheater

资金

  1. Ministry of Communication and Information Technology

向作者/读者索取更多资源

Titanium nitride (TiN) thin films are deposited on Si/SiO2 substratesby using Pulsed DC magnetron sputtering and are characterized for their structural, mechanical and electrical properties for their application as localized heating elements in microsystem devices. The influence of substrate temperature on the properties of TiN films has been investigated. The correlation between the structural orientation with mechanical and electrical properties has been established. The films deposited at a substrate temperature of 300 degrees C have shown better structural, mechanical and electrical properties. This film has been chosen for the fabrication of microheater and its characterization. A maximum temperature of 250 degrees C is achieved by applying a power of 2.8 W to the microheater. (C) 2018 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据