期刊
SENSORS AND ACTUATORS A-PHYSICAL
卷 271, 期 -, 页码 251-256出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.sna.2018.01.041
关键词
Transparent MoO3 layer; Reactive sputter; Long wavelength photons; Infrared Si photodetector; Heterojunction
资金
- Basic Science Research Program through the National Research Foundation (NRF) of Korea by the Ministry of Education [NRF-2015R1D1A1A01059165]
In this work, a high-performing infrared photodetector is achieved using a MoO3/p-Si heterojunction. A high-quality MoO3 film is formed using the sputtering method, which enables the application of large-scale MoO3 film-embedded Si devices. A partial oxygen flow is effective to form the (001) preferential growth of the MoO3 film. The MoO3/Si heterojunction is applied for use in a long wavelength (1100 nm) photodetector to provide a fast rise time (72.32 ms) and fall time (68.15 ms). The optically transparent MoO3 film is effective for allowing incoming light into the Si and efficiently collecting the photogenerated carriers. In addition, the transparent MoO3 film also serves as an anti-reflection coating layer allowing 7.89% reflection for broad wavelengths. MoO3 is effective at harvesting infrared photons. Thus, the functional uses of a MoO3 film would significantly enhance Si-based photoelectric devices, including solar cells and photodetectors. (C) 2018 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据