期刊
SENSORS
卷 18, 期 6, 页码 -出版社
MDPI
DOI: 10.3390/s18061668
关键词
black phosphorus; larger layer thickness; near-infrared photodetection; optoelectronic device
资金
- National Key RD Plan of China [2017YFB1104903]
- NSF [IIS-1054585]
- Direct For Computer & Info Scie & Enginr
- Div Of Information & Intelligent Systems [1054585] Funding Source: National Science Foundation
Black phosphorus (BP), owing to its distinguished properties, has become one of the most competitive candidates for photodetectors. However, there has been little attention paid on photo-response performance of multilayer BP nanoflakes with large layer thickness. In fact, multilayer BP nanoflakes with large layer thickness have greater potential from the fabrication viewpoint as well as due to the physical properties than single or few layer ones. In this report, the thickness-dependence of the intrinsic property of BP photodetectors in the dark was initially investigated. Then the photo-response performance (including responsivity, photo-gain, photo-switching time, noise equivalent power, and specific detectivity) of BP photodetectors with relative thicker thickness was explored under a near-infrared laser beam ((IR) = 830 nm). Our experimental results reveal the impact of BP's thickness on the current intensity of the channel and show degenerated p-type BP is beneficial for larger current intensity. More importantly, the photo-response of our thicker BP photodetectors exhibited a larger responsivity up to 2.42 A/W than the few-layer ones and a fast response photo-switching speed (response time is similar to 2.5 ms) comparable to thinner BP nanoflakes was obtained, indicating BP nanoflakes with larger layer thickness are also promising for application for ultra-fast and ultra-high near-infrared photodetectors.
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