4.5 Article

THz-Assisted Instantaneous Gain Switching in Quantum Dot Semiconductor Optical Amplifiers

期刊

IEEE PHOTONICS TECHNOLOGY LETTERS
卷 27, 期 3, 页码 288-291

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2014.2369514

关键词

Quantum dots; gain switching; quantum confined Stark effect; THz field

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A new concept of instantaneous gain switching in quantum dot semiconductor optical amplifier (QD-SOA) is introduced in this letter. Based on numerical modeling, instantaneous gain dynamics of a QD-SOA due to modulation of quantum confinement potential of quantum dots with applied terahertz (THz) electric field is described and gain clamping phenomenon is discussed. The proposed gain switching mechanism is promising for THz to optical wavelength conversion in THz communication scenarios.

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