期刊
SCRIPTA MATERIALIA
卷 150, 期 -, 页码 66-69出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2018.02.037
关键词
Germanium; Palladium; Gallium; Contact; Reaction
类别
资金
- French National Agency for Research (ANR) through the program Science de l'ingenierie [ANR-12-JS09-0015-1]
- Agence Nationale de la Recherche (ANR) [ANR-12-JS09-0015] Funding Source: Agence Nationale de la Recherche (ANR)
PdGe contact fabrication on Ge(001) wafers doped with Ga is investigated using conventional complementary metal-oxide-semiconductor processes. Despite a p-type doping level of similar to 1.4 x 10(20) cm(-3), the resistivity of the PdGe contact is found to be twice higher than that of undoped Ge. Ga doping has no influence on the Pd reaction with Ge. However, the doping process and the Salicide process led to the formation of Ga-Pd defects in both sides of the PdGe/Ge interface, resulting from Ga and Pd co-segregation on Ge dislocation loops. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据