期刊
出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.egypro.2012.07.077
关键词
Black Silicon; Passivation; Al2O3; ALD
资金
- Federal German Agency of Science and Education (BMBF)
Upon inductive coupled plasma reactive ion etching (ICP-RIE) of Si surfaces needle-like nanostructures with aspect ratios up to 10 emerge showing excellent anti-reflection and light-trapping properties with absorption over 97% throughout the UV and VIS spectral range. In addition, the absorption at the band edge of silicon is enormously enhanced due to scattering. In this work we report on the feasibility to deposit conformal Al2O3 dielectric layers on these very rough silicon surfaces which enable adequate surface passivation. Lifetimes over 170 mu s have been measured on deep structured b-Si substrates. The optical properties of black silicon (b-Si) and the possible influence of applied alumina passivation layers as well as their passivation performance are discussed. (C) 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference.
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