期刊
SCIENCE
卷 359, 期 6380, 页码 1131-1135出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.aao5360
关键词
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资金
- Air Force Office of Scientific Research [FA9550-16-1-0031, FA9550-16-1-0347, FA2386-13-1-4118]
- National Science Foundation (NSF) through the Cornell Center for Materials Research
- NSF Materials Research Science and Engineering Centers (MRSEC) program [DMR-1719875]
- University of Chicago MRSEC [NSF DMR-1420709]
- Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM) [DMR-1539918]
- Samsung Advanced Institute of Technology
- Cornell Center for Materials Research [NSF DMR-1719875]
- MRSEC Shared User Facilities at the University of Chicago [NSF DMR-1420709]
- Cornell University
- Office of Science of the U.S. Department of Energy [DE-AC02-06CH11357, DE-AC02-05CH11231]
Epitaxy forms the basis of modern electronics and optoelectronics. We report coherent atomically thin superlattices in which different transition metal dichalcogenide monolayers-despite large lattice mismatches-are repeated and laterally integrated without dislocations within the monolayer plane. Grown by an omnidirectional epitaxy, these superlattices display fully matched lattice constants across heterointerfaces while maintaining an isotropic lattice structure and triangular symmetry. This strong epitaxial strain is precisely engineered via the nanoscale supercell dimensions, thereby enabling broad tuning of the optical properties and producing photoluminescence peak shifts as large as 250 millielectron volts. We present theoretical models to explain this coherent growth and the energetic interplay governing the ripple formation in these strained monolayers. Such coherent superlattices provide building blocks with targeted functionalities at the atomically thin limit.
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