期刊
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
卷 25, 期 1, 页码 13-15出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2014.2365745
关键词
Inkjet-printing; printed electronics; RF passives; silicon; thin-film capacitors
Vertically-integrated metal-insulator-metal (MIM) capacitors on silicon are demonstrated for the first time utilizing an entirely additive RF-specific inkjet-printing process. The inkjet-printed MIM capacitors demonstrate a high capacitance per unit area of up to 33 by utilizing novel dielectric inks, while achieving quality factors (Q) up to 25 and self-resonant frequencies (SRFs) above 1 GHz. Measurements of dielectric permittivity, leakage current, voltage breakdown, and fabrication repeatability are presented confirming the high-performance operation of the printed MIM capacitors.
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