期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 50, 期 11, 页码 2773-2785出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2015.2476815
关键词
Dense thermal monitoring; dynamic thermal management; microprocessors; near-threshold voltage; on-chip temperature sensor; system-on-chip
资金
- Catalyst Foundation
This paper presents compact and voltage-scalable temperature sensor circuits for implementing dynamic thermal management (DTM) in high-performance microprocessors and Systems-on-Chips (SoC). The proposed sensor front ends require only 6 to 8 NMOS transistors, resulting in more than one order of magnitude smaller area than the previous state of the art. The sensor supply voltage can be scaled down to 0.6 V, so it can be integrated with digital circuits employing a dynamic-voltage-scaling technique without additional power distribution and regulation. Sensor front ends with three different sizes (115, 279, and 400 mu m(2)) and their back ends have been prototyped in a 65 nm CMOS technology. The measurement results of the 279 mu m(2) front end at 0.6 V show a worst-case error of 7.0 degrees C across 64 instances 0 degrees C to 100 degrees C after a low-cost one-temperature-point calibration. With the same conditions, the measurements of the 400 mu m(2) front end show a worst-case error of 5.4 degrees C across 64 instances. The compact sensor designs make it possible to integrate an order of magnitude more sensors on a chip with little additional overhead and thereby enable very dense thermal monitoring in digital VLSI systems.
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