期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 21, 期 4, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2015.2404877
关键词
GaN; light-emitting diodes (LEDs); quantum dots (QDs)
资金
- National Science Council in Taiwan [NSC101-2221-E-009-046-MY3, NSC 103-3113-E-009-001-CC2, NSC 103-2917-I-009-179]
This study presents extremely uniform colloidal quantum dot white light-emitting diodes (QD-WLEDs) that demonstrate a high color rendering index (CRI) and correlated color temperatures (CCTs) ranging from 2500 to 4500 K. Experimental results indicate that the structure of the distributed Bragg reflector (DBR) containing a stopband in the UV region enhances the intensity output of both monochromatic QD-LEDs and QD-WLEDs by reflecting the unconverted UV light back onto the package to excite the QDs further. Furthermore, the angular CCT uniformity of the QD-WLEDs also improved considerably because of the dependence of the DBR structure on the incident angle. The angular CCT deviation in the range of -70 degrees to 70 degrees decreased to 39 K and the CRI of the WLED is higher than 90. The high-CRI and uniform angular CCT QD-WLED containing the DBR demonstrates potential applicability as the lighting source of next-generation display devices and solid-state lighting.
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