期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 21, 期 4, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2014.2369516
关键词
Optical modulation; silicon modulators; high-speed operation
资金
- SASER (CELTIC/BMBF)
- RF2THzSiSoC (CATRENE/BMBF)
- EU
Fundamental limiting factors regarding high-speed performance of broadband depletion-type silicon (Si) Mach-Zehnder modulators (MZMs) are studied. Optical and electrical measurements of MZMs with traveling wave electrodes (TWE) reveal significant dependences between optoelectrical bandwidth and design parameters. An equivalent circuit model is implemented to fit measured modulator characteristics. Using the model, the limits of TWE depletion-type Si MZM systems are studied under the requirement of specific driving voltage. By comparing phase shifters with different doping concentration or junction position, we explore the fundamental optical and electrical tradeoffs which are limiting high-speed operation.
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