Tunable HBAR Based on Magnetoelectric YIG/ZnO Structure

High overtone resonators with YIG/ZnO structure were prepared. For excitation of bulk transversal or/and longitudinal AW, thin ZnO films were sputtered on the layered structure, consisting of yittrium iron garnet (YIG) epitaxial film grown on the gadolinium gallium garnet substrate. The influence of 0 - 2 kOe bias field on AW resonance frequencies and attenuation was investigated. For the magnetic field oriented in the plane of the YIG film the obtained results prove its effective influence on the spectra of transverse AW with polarization vector quasicollinear with the field direction. Two types of non-monotonic dependences were observed. One of them was observed in the region at 260 Oe when YIG was saturated, and AW resonance frequencies were about 2 GHz. This value is close to the estimated FMR frequency. The frequency tuning about 0.25MHz was observed. It is due to the resonance magnetoelastic interaction in the YIG film that results in the AW phase shift in the whole structure. The second one was observed for non saturated region of magnetic fields from 0 to 100 Oe. The frequency range from 0.7 to 1 GHz corresponds magnetoelectric excitation of domain resonance modes.