EFFECT OF ELECTRON-ELECTRON INTERACTION NEAR THE METAL-INSULATOR TRANSITION IN DOPED SEMICONDUCTORS STUDIED WITHIN THE LOCAL DENSITY APPROXIMATION

We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron interactions between the carriers using density functional theory in the local density approximation. Preliminary results suggest that the model exhibits a metal-insulator transition.