4.8 Article

Investigation of the Electric Structures of Heterointerfaces in Pt- and In2S3-Modified CuInS2 Photocathodes Used for Sunlight-Induced Hydrogen Evolution

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 7, 期 29, 页码 16086-16092

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b04634

关键词

photocathodes; copper indium disulfide; indium disulfide; heterointerface; X-ray photoelectron spectroscopy

资金

  1. MEXT Japan
  2. JST Japan
  3. DGHE, Ministry of Education and Culture of Republic of Indonesia [270/E4.4/K/2012]
  4. Grants-in-Aid for Scientific Research [15H03850, 15H00875] Funding Source: KAKEN

向作者/读者索取更多资源

Copper indium disulfide (CuInS2) modified with art In2S3 layer and a Pt catalyst showed a more efficient photoelectrochemical (PEC) property for hydrogen evolution from a nearly neutral (pH 6) 0.2 M NaH2PO4 solution under simulated sunlight illumination (AM 1.5G) than that of a CuInS2 electrode modified with a CdS layer and a Pt catalyst. Analysis of the PEC properties of In2S3 modified CuInS2 (In2S3/CuInS2) and CdS-modified CuInS2 (CdS/CuInS2) in solutions containing an electron scavenger (Eu3+) showed identical enhancement of the PEC properties of In2S3/CuInS2 when compared to those of CdS/CuInS2, indicating the formation of a favorable heterointerface in In2S3/CuInS2 for efficient charge separation. Spectroscopic evaluation of conduction band offsets revealed that In2S3/CuInS2 had a notch-type conduction band offset, whereas a cliff-type offset was formed in CdS/CuInS2: these results also revealed a,better interface electric structure of In2S3/CuInS2 than that of CdS/CuInS2.

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