3.8 Proceedings Paper

SPICE level analysis of Single Event Effects in an OxRRAM cell

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IEEE

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OxRRAM; ReRAM; SEE; SPICE simulation

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As emerging non-volatile memories, based on resistive switching mechanisms, are attractive candidates to overcome future power issues, this paper proposes to analyze Single Event Effects in circuitry surrounding OxRRAMs. The impact of a particle crossing the circuit is presented. A threshold effect is pointed out even if the probability of SEE occurrence is shown to be low in common technologies.

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