期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 1, 页码 29-31出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2367542
关键词
Aluminium nitride (AlN); titanium nitride (TiN); hafnium nitride (HfN); resistive random access memory (RRAM); bipolar switching
资金
- Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA), via Sandia National Laboratories
- Future Data Center Technologies Thematic Strategic Research Programme: NVM based on integration of PCRAM and RRAM cells with ultra scaled vertical Si nanowire devices (SERC) [1121720016]
This letter presents the novel CMOS-compatible all-metal-nitride resistive random access memory (RRAM) devices based on the TiN/AlN/TiN stack. The device has low operation current <100 mu A, retention of >3x10(5) s at 150 degrees C, and ac endurance of up to 10(5) Hz. The device switch characteristics are found to agree with the filamentary switch mechanism. In addition, the RRAM devices built with an additional hafnium nitride capping layer have showed less switch voltage variations and stable switch characteristics.
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