期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 4, 页码 327-329出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2407193
关键词
High electron mobility transistor (HEMT); high frequency; terahertz monolithic integrated circuit (TMIC); 25 nm gate; indium phosphide (InP)
资金
- U.S. Defense Advanced Research Projects Agency (DARPA) THz Electronics Program
- U.S. Army Research Laboratory, Adelph, MD, USA, through the DARPA [HR0011-09-C-0062]
We report the first ever terahertz monolithic integrated circuit amplifier based on 25-nm InP high electron mobility transistor (HEMT) process demonstrating amplification at 1 THz (1000 GHz) with 9-dB measured gain at 1 THz. This milestone was achieved with a 25-nm InP HEMT transistor, which exhibits 3.5-dB maximum available gain at 1 and 1.5 THz projected f(MAX).
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据
分享论文
