High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2

We report high mobility Si-face 4H-SiC MOSFET results via a novel interface engineering technique using a gate-stack consisting of lanthanum silicate (LaSiOx) and atomic layer deposited SiO2. Peak field effect mobility of 132.6 cm(2)/V . s has been achieved while maintaining a positive threshold voltage (3.1 V). From the peak field effect mobility's dependence on measurement temperatures, it has been found that the mobility of La containing MOSFET is limited by phonon scattering.