期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 8, 页码 745-747出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2440434
关键词
Contact resistance; Fermi-level unpinning; germanium; SF6 plasma; surface passivation
资金
- Basic Science Research Program through National Research Foundation of Korea within Ministry of Science, ICT, and Future Planning [2014R1A1A1036090]
- Technology Innovation Program through Ministry of Trade, Industry and Energy [10048594]
We demonstrate Fermi-level unpinning and contact resistance reduction by surface passivation using SF6 plasma treatment of a metal/germanium (Ge) contact. A specific contact resistivity (rho(c)) of 1.14 x 10(-3) Omega . cm(2) and 0.31 eV of Schottky barrier height is achieved for a Ti/SF6-treated n-type Ge (n-Ge) (N-d = 1 x 10(17) cm(-3)) contact, exhibiting 1700 times rho(c) reduction from a Ti/nontreated n-Ge contact. A convenient and effective passivation process of the Ge surface is presented to alleviate Fermi-level pinning at metal/Ge contact and lower source/drain contact resistance of Ge n-type field-effect transistors.
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