期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 5, 页码 514-516出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2409212
关键词
Device simulation; tunnel-FET
资金
- Swiss National Science Foundation [PP00P2 133591]
- European Union [FP7-604416, FP7-619509]
- Swiss National Supercomputing Centre [s503]
- National Science Foundation (NSF) through the University of Minnesota MRSEC [DMR1420013]
- Swiss National Science Foundation (SNF) [PP00P2_133591] Funding Source: Swiss National Science Foundation (SNF)
Band-to-band tunneling field-effect transistors (TFETs) made of a vertical heterojunction of single-layer MoTe2 and SnS2 are investigated by means of 3-D, full-band, atomistic quantum-transport simulations relying on a first-principles basis. At a supply voltage V-dd = 0.4 V and OFF-current I-OFF = 10(-6) mu A/mu m, ON-state currents >75 mu A/mu m are reported for both n- and p-type logic switches. Our findings indicate that metal-dichalcogenide heterojunction TFETs represent a viable option in low-power electronics.
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