期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 6, 页码 603-605出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2423971
关键词
SC-CVD diamond; MOS structures; inversion
资金
- Swedish Research Council
For the advancement of diamond-based electronic devices, the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs) is crucial, as this device finds applications in numerous fields of power electronics and high-frequency systems. The MOS capacitor forms the basic building block of the MOSFET. In this letter, we describe planar MOS capacitor structures fabricated with atomic layer deposited aluminum oxide as the dielectric on oxygen-terminated boron-doped diamond substrates with different doping levels. Using capacitance-voltage measurements, we have, for the first time, observed inversion behavior in MOS structures on boron-doped diamond, with a doping concentration of 4.1 x 10(19)/cm(3).
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据