期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 5, 页码 511-513出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2416689
关键词
Analog-to-digital converter (ADC); magnetic tunnel junction; spin hall effect; voltage controlled magnetic anisotropy
资金
- National Science Foundation (NSF) Nanoelectronics Beyond program under Award NSF-NEB [1124831]
- C-SPIN, one of six STARnet program Centers
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [GRANTS:13711793, 1124831] Funding Source: National Science Foundation
A spin-based analog-to-digital converter (ADC) using magnetic tunnel junctions (MTJs) is proposed in this letter. Our proposal is based on a novel high-speed low-power MTJ comparator that is controlled through spin Hall effect and voltage-controlled magnetic anisotropy effects. According to the simulation results, spin ADC offers features including high sampling rate, low-power consumption, and less chip area occupation for higher bit resolution while provides the benefit of nonvolatility of conversion results.
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