期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 12, 页码 1267-1270出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2490719
关键词
High-kappa dielectric; SILC; pulse stress; overshoot
资金
- National 02 Key Science and Technology Project
Overshoot stress (stimulating the actual IC operating condition) on an ultra-thin HfO2 (EOT similar to 0.8 nm) high-kappa layer is investigated, which reveals that overshoot is of great importance to high-kappa layer leakage degradation. The dynamic stress-induced leakage current is correlated with traps generation and recovery, which is dependent on stress input and release. A degradation model based on the oxygen vacancies is proposed to interpret the experimental observation.
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