期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 4, 页码 303-305出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2404358
关键词
AlGaN/GaN; high electron mobility transistor (HEMT); Ka-band; millimeter-wave power density
资金
- Research National Agency within the frame of STARGaN Project [NT09_479311]
- RENATECH Technological Network
- Cluster of Excellence GANEX [ANR-11-LABX-0014]
This letter reports on the demonstration of microwave power performance at 40 GHz on AlGaN/GaN high-electron mobility transistor grown on silicon (111) substrate by molecular beam epitaxy. A maximum dc current density of 1.1 A.mm(-1) and a peak extrinsic transconductance of 374 mS.mm(-1) are obtained for 75-nm gate length device. At V-DS = 25 V, continuous-wave output power density of 2.7 W.mm(-1) is achieved at 40 GHz associated with 12.5% power-added efficiency and a linear power gain (G(p)) of 6.5 dB. The device exhibits an intrinsic current gain cutoff frequency F-T of 116 GHz and a maximum oscillation frequency F-MAX of 150 GHz. This performance demonstrates the capability of low cost microwave power devices up to Ka-band.
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