期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 10, 页码 1076-1078出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2465850
关键词
Permittivity; atomistic modeling; oxide interface; density-functional tight binding; silicon-on-insulator
资金
- University Grant Council of Hong Kong [AoE/P-04/08]
- National Natural Science Foundation of China [21273186]
We establish the dependence of the permittivity of oxidized ultra-thin silicon films on the film thickness by means of atomistic simulations within the density-functional-based tight-binding (DFTB) theory. This is of utmost importance for modeling ultra-thin and extremely thin silicon-on-insulator MOSFETs, and for evaluating their scaling potential. We demonstrate that electronic contribution to the dielectric response naturally emerges from the DFTB Hamiltonian when coupled to Poisson equation solved in vacuum, without phenomenological parameters, and obtain good agreement with the available experimental data. Comparison with calculations of H-passivated Si films reveals much weaker dependence of permittivity on film thickness for the SiO2-passivated Si, with less than 18% reduction in the case of 0.9-nm silicon-on-insulator.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据