期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 8, 页码 814-816出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2442678
关键词
Dielectrophoresis; nanowires; Schottky photodiodes; ultraviolet photodetectors; ZnO
资金
- Banco Santander-Universidad Autonoma de Madrid Cooperation Program through the Universidad Autonoma de Madrid,Madrid,Spain
- University of Alabama, Tuscaloosa, AL, USA
This letter presents the characterization results of nanowire ( NW) Schottky photodiodes fabricated from the dielectrophoretic contact between a ZnO NW and a Cu electrode. The device counter-electrode is fabricated using Pt focused ion beam deposition. The current-voltage characteristics exhibit rectifying properties with a leakage current as low as 40 pA at -40 V. The fitting of the forward characteristics reveals a barrier height lowering under UV illumination along with a large reduction of the series resistance. At forward bias, responsivities of similar to 10(5) A/W are obtained above the bandgap energy. Under reverse bias, the responsivity reduces up to 10(4) A/W, but a higher ultraviolet/visible contrast and a faster response are observed. In those conditions, the barrier height lowering is fostered by the drift of photogenerated holes toward the interface with the yielding lower barrier height values under illumination.
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