4.6 Article

Pixel Architecture for Low-Power Liquid Crystal Display Comprising Oxide and Ferroelectric Memory Thin Film Transistors

期刊

IEEE ELECTRON DEVICE LETTERS
卷 36, 期 6, 页码 585-587

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2424216

关键词

Low-power liquid crystal display; ferroelectric TFT; oxide TFT

资金

  1. ICT Research and Development Program through the Ministry of Science, ICT and Future Planning/Institute for Information and Communications Technology Promotion [10041416]
  2. Ministry of Public Safety & Security (MPSS), Republic of Korea [B0101-15-0133] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  3. National Research Foundation of Korea [22A20130000119] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

A new pixel architecture and driving scheme for a low-power liquid crystal display (LCD) with a low refresh-rate is proposed. The proposed pixel architecture comprises two oxide thin-film transistors (Ox-TFTs), two ferroelectric memory TFTs (Fe-MTFTs), and two capacitors. Both TFTs have the same indium gallium zinc oxide film as an active layer. The Fe-MTFT exhibits a hysteresis property owing to the ferroelectric gate insulator that enables it to operate as a memory. A prototype LCD with 6 x 5 pixels is fabricated in this letter. The field-effect mobility of Ox-TFTs is 11 cm(2)V(-1)s(-1). The memory window of Fe-MTFT is 5 V with a gate-voltage sweep from -20 to 20 V. After programming the Fe-MTFTs, the fabricated LCD successfully operates at a 0.5-Hz refresh-rate.

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