期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 11, 页码 1169-1171出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2476380
关键词
Complementary metal-oxide-semiconductor (CMOS); backside-illuminated photovoltaic device; antireflective surface
资金
- Ministry of Science and Technology, Taiwan [MOST 102-2218-E-110-010, MOST 103-2221-E-110-038, MOST 104-2221-E-110-061]
A backside-illuminated deep-n-well-assisted CMOS photovoltaic device with a thinned substrate and an antireflective surface is demonstrated to improve the photocurrent collection efficiency from the low-lifetime bulk. The deep-n-well layer in a standard bulk CMOS process is utilized to maximize the junction area in order to collect more photocurrent before being recombined. An array of pyramid structure is realized to reduce the surface reflectivity and generate more photocurrent in the bulk. All efforts lead to a 33.37% ultimate efficiency and a 1.67-mW electrical power under 5-mW irradiated 980-nm illumination. With the unique advantages of high efficiency and CMOS compatibility, it is promising to practically integrate the proposed photovoltaic device with other microelectronics to realize a self-powered system.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据