期刊
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
卷 115, 期 27, 页码 6986-6990出版社
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1718931115
关键词
scanning tunneling microscopy; charge density waves; strain; NbSe2
资金
- Lindemann Trust Fellowship of the English-Speaking Union
- Astor Junior Research Fellowship of New College, Oxford
- Vidi grant - Netherlands Organisation for Scientific Research
- National Science Foundation [NSF-DMR-1709987, NSF-DMR-1654041]
- Department of Energy [DE-FG02-99ER45747]
- U.S. Department of Energy (DOE) [DE-FG02-99ER45747] Funding Source: U.S. Department of Energy (DOE)
A charge density wave (CDW) is one of the fundamental instabilities of the Fermi surface occurring in a wide range of quantum materials. In dimensions higher than one, where Fermi surface nesting can play only a limited role, the selection of the particular wavevector and geometry of an emerging CDW should in principle be susceptible to controllable manipulation. In this work, we implement a simple method for straining materials compatible with low-temperature scanning tunneling microscopy/spectroscopy (STM/S), and use it to strain-engineer CDWs in 2H-NbSe2. Our STM/S measurements, combined with theory, reveal how small strain-induced changes in the electronic band structure and phonon dispersion lead to dramatic changes in the CDW ordering wavevector and geometry. Our work unveils the microscopic mechanism of a CDW formation in this system, and can serve as a general tool compatible with a range of spectroscopic techniques to engineer electronic states in any material where local strain or lattice symmetry breaking plays a role.
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