期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 7, 页码 675-677出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2428719
关键词
Electron affinity; homogeneous switching; resistive switching memory (RRAM)
资金
- Ministry of Science and Technology, Taiwan, through the National Science Council of Taiwan [NSC 102-2221-E-009-134-MY3]
The homogeneous switching of Ti/WO3/ZrO2/W resistive switching memory devices with stable resistive switching, forming-free, self-compliance, and multilevel operation characteristics are demonstrated. The area dependence of current at the low resistance and high resistance states confirms that the switching mechanisms of the devices are homogeneous conduction. The devices exhibit the stable bipolar resistive switching behavior with a low operating current (<10(-6) A) by inserting the WO3 layer with high electron affinity between the Ti top electrode and the ZrO2 layer and modulating the potential profiles at the WO3/ZrO2 interface. In addition, multilevel operation can be achieved by adjusting the magnitudes of set/reset voltages.
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