InAs Planar Nanowire Gate-All-Around MOSFETs on GaAs Substrates by Selective Lateral Epitaxy

High indium content III-V materials are one of the most promising candidates for beyond Si CMOS technologies. We present InAs planar nanowire (NW) MOSFETs grown directly on a semi-insulating GaAs (100) substrate by the selective lateral epitaxy (SLE) method via the metal-seeded planar vapor-liquid-solid mechanism. Despite a similar to 7% lattice mismatch, in-plane and self-aligned single-crystal InAs NWs are grown epitaxially on GaAs. Such heterogeneous SLE provides a potential solution for the integration of different channel materials on one substrate. Gate-all-around MOSFET devices are fabricated by releasing the NW channel from the substrate through a combination of digital etching and selective etching processes. The device with a NW width of 30 nm and gate length of 350 nm shows an I-ON/I-OFF ratio of 10(4) and a peak transconductance of 220 mS/mm at V-ds = 0.5 V.