期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 8, 页码 811-813出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2451005
关键词
a-IGZO; bulk-accumulation; dual-gate; flexible; mechanical bending; thin-film transistors (TFTs)
资金
- Industrial Strategic Technology Development Program through Ministry of Trade, Industry and Energy/Korea Evaluation Institute of Industrial Technologies [10045269]
We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxide gate insulators, and molybdenum gate and source/drain electrodes. High mechanical stability is achieved by shorting the two gates together to induce bulk accumulation (BA)-a condition in which the channel accumulation layer of electrons extends the entire depth of the active layer. It is shown experimentally that the BA a-IGZO TFTs exhibit better stability under bending stress compared with single gate-driven TFTs. From TCAD simulations, the immunity to slight variations in carrier concentration under tensile strain is found to be a result of the high gate-drive intrinsic of the BA TFTs.
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